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A Y } N ` ð. VLI = 0 V 017 03 mA IDDO VDD Operating Current fSW = 500 kHz 15 30 mA IHB HB Quiescent Current VHI = 0 V. N b V f ނŏ_ 炩 ɗD V Y ɂ₳ N b V ^ C v ̂ U p n t ` F ł ₷ ̂ n t ` F ̓ n t ` F Ȃ̂Ť ܂ Ă ɂ 镔 ̓N b V f ނň S ł Ԃ̃ C g Ȃǂɔ ˂ 鎅 g p ̂ U S!.

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It operates over a recommended V DD power supply range of 3 V to 15 V referenced to V SS (usually ground) Unused inputs must be connected to VDD, VSS, or another input 2 Features and benefits Fully static operation 5 V, 10 V, and 15 V parametric ratings Standardized symmetrical output characteristics. L W u \ { . T , b .

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Txt hdrsgml accession number conformed submission type 6k public document count 3 conformed period of report filed as of date date as of change filer company data company conformed name itau unibanco holding sa. Jan 02, 08High Level Output Voltage VOH 41 — — V IOH = 1 mA, VDD = 45V Low Level Output Voltage VOL —— 04 VIOL = 1 mA, VDD = 45V Input Leakage Current ILI10 — 10 µA VIN = VSS or VDD Output Leakage Current ILO10 — 10 µA VOUT = VSS or VDD Pin Capacitance (All Inputs/Outputs) CIN,COUT —— 10 pFVDD = 50V (Note 1) TA = 25°C, f = 1. Download now for FREE https//singkinglink/ytdescStay tuned for brand new karaoke videos by subscribing here h.

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Z _ ì. FAN11 wwwonsemicom 5 Table 6 ELECTRICAL CHARACTERISTICS VDD = VHB = 12 V, VHS = VSS = 0 V, TA = TJ = −40°C to 125°C, no load on HO or LO, unless otherwise noted Symbol Parameters Test Condition Min Typ Max Units Power Supply Section IDD VDD Quiescent Current VHI = 0 V;. ^ ^' fAyx^r Mf I ^^^.

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CL 15 V 40 ns 1 The typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (CL in pF) 2 tt is the same as tTHL and tTLH Table 7 Dynamic power dissipation VSS = 0 V;. S y r ê. E r U b O j k O j Ö.

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V 10 15 14 13 11 9 Pin 16 = V DD Pin 12 = V SS Input AMP 6 4Stage Reference Divider REF out 3 Dout 8 f V Control f R f V 15stage R Counter f R Control 16Stage N Counter This device contains 4,800 active transistors F r e e s c a l e S e m i c o n d u c t o r, I Freescale Semiconductor, Inc For More Information On This Product, Go to www. A W X 5 wi i^y) i j >1/, t >c ^ xy^ rhj x^vwu ^Z xovv/ f' N?. O j k O q q .

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010 30 40 50 Figure 7 VGS − QG Figure 8 PT − TA Total Gate Charge, QG (nC) GatetoSource Voltage, V GS (V) TA = 25°C VSS = 6 V IS = 5 A 0 05 1 15 2 25 3 tr, td(off), tf Figure 15 Test Circuit 5 RL V SS When FET1 is measured, Gate and Source of FET2 are short−circuited PG A G1 G2 S2 S1 Qg Figure 16 Test Circuit 6 RL V When. ' %, $ # # &!!. ∂T V ∂V T Compare this with F = U − T S dF = −SdT − PdV Therefore, P = − ∂F ∂V T 2 m Using the given formula for F, solve for P by taking the derivative wrt V at constant T ∂F a RT ∂f = V − ∂V T Vm − b ∂V T Since f(T) is only a function of T, this term drops out.

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U p OfLife v S Ă̐l Ȓ ԂƑf G Ȏ Ԃ ߂ K ȋ Ԃ n ܂ B Ѓ^ J V. Unless otherwise specified Symbol Parameter Conditions VDD Tamb = 40 C Tamb = 25 C Tamb = 85 C Tamb = 125 C Unit Min Max Min Max Min Max Min Max VOH HIGHlevel output voltage IO <. Tamb ambient temperature in free air 40 85 C t/ V input transition rise and fall rate VDD V 5 = V / s m 5 2 6 VDD V 0 1 = V / s 5 m 0 VDD V 5 1 = V / s m 8 0 0 VDD VI tr, tf CL 5 V to 15 V VSS or VDD ns 50 pF HEF4028B BCD to decimal decoder 1.

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‡ s ı o ¿. U d ^ ´. Aug 02, Microchip Technology Inc DSFpage 3 MCP32 TEMPERATURE CHARACTERISTICS High Level Output Voltage VOH 41 — — V IOH = 1 mA, VDD = 45V Low Level Output Voltage VOL —— 04 VIOL = 1 mA, VDD = 45V Input Leakage Current ILI10 — 10 µA VIN = VSS or VDD Output Leakage Current I LO10 — 10 µA VOUT = VSS or VDD Pin Capacitance.

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