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SiJH112E wwwvishaycom Vishay Siliconix S0554Rev A, Jul 1 Document Number For technical questions, contact pmostechsupport@vishaycom THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

40atfv vv. IDSS Draintosource leakage current VGS = 0 V, VDS = 24 V 1 μA I GSS Gatetosource leakage current V DS = 0 V, V GS = V 100 nA V GS(th) Gatetosource threshold voltage V DS = V GS , I DS = 250 μA 115 14 165 V. Search the world's information, including webpages, images, videos and more Google has many special features to help you find exactly what you're looking for. A percent v/v solution is calculated by the following formula using the milliliter as the base measure of volume (v) % v/v = mL of solute/100 mL of solution Example What is the % v/v of a solution that has 50 mL of hydrochloric acid (HCl) diluted to 100 mL with deionized water?.

VDS = 10 V, VGS = 0 V 100 µA VDS = 10 V, TJ = 125 °C, VGS = 0 V 500 IGSS Gatesource leakage current VGS = V/–10 V ±100 nA Note Pulse test pulse width < 380 µs, duty cycle < 2% The following table shows the dynamic characteristics for the MSC040SMA1J device TJ = 25 °C unless otherwise specified Table 4 • Dynamic. Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = V 100 nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V GS(TH) V GS = V DS , I D = 25 A 12 V. V DD 47 kΩ 1 kΩ 47 kΩ 27 kΩ 1 kΩ 12 V V i ≤ V GS 20 μF P W I G = CONST 100 Ω 100 nF DUT V G AMv1 A D DUT S B G 25 A B B R G G FAST DIODE D S L=100 µH µF 33 1000 µF Ω V DD DUT V (BR)DSS V DD V D I DM I D AMv1 0 AMv1 V GS 90% V DS t on 90% 10% 90% 10% t d(on) t r t t d(off) t f 10% 0 off.

/ v v P o Ç U Z } ( Z u i } Z } } ( i µ Created Date 1/13/15 PM. 1 BSZ068N06NS Final Data Sheet Rev 23, 1221 TSDSON8 FL (S3O8) 8 D 7D 6D 5D S1 S2 S3 G 4 MOSFET OptiMOSTM PowerTransistor, 60 V Features • Optimized for high performance SMPS, eg sync rec. NP40N10YDF, NP40N10VDF, NP40N10PDF Preliminary R07DS0361EJ01 Rev1 Page 6 of 9 May 13, 13 TA = –55°C –25°C 25°C 75°C 100°C 125°C 150°C.

IDSS DraintoSource Leakage Current VGS = 0 V, VDS = V 1 μA I GSS GatetoSource Leakage Current V DS = 0 V, V GS = –12 V to 16 V 100 nA V GS(th) GatetoSource Threshold Voltage V DS = V GS , I D = 250 μA 12 15 19 V. CSDQ5A 60 V NChannel NexFET™ Power MOSFET 1 Features Product Summary 1• UltraLow Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Draintosource voltage 60 V • Avalanche Rated Q g Gate charge total (10 V) 17 nC • Logic Level Qgd Gate charge gatetodrain 35 nC • Pb Free Terminal Plating VGS = 45 V 99 mΩ. VGE (V) V CE = 6 V TJ = 25 °C TJ = 175 °C Figure 10 Diode VF vs forward current IGBTM65FDVF 22 18 14 10 06 02 0 10 30 V F (V) I F (A) T j = 40 °C T j = 175 °C T j = 25 °C Figure 11 Normalized VGE(th) vs junction temperature IGBTM65FNVGE 11 10 09 08 0750 0 50 100 150.

5 i f ( sbe v buf 6 o jw fstjuz pg " e w bo dfe 4 uv e jft ñ % fq bsun fo u pg % bub 4 djfo df 5 i f *o tujuv uf pg 4 ubujtujdbm bui fn bujdt h p d l o q r p d # l v p d f m s jttjo h e bub jt b dpn n po q spc mfn jo mpo h juv e jo bm dmjo jdbm usjbmt bo e n jy fe fggfdut. The Volvo V40’s lineage can be traced back through the 1995 Mitsubishirelated car of the same name, via the DAFbuilt 440/460 of the late 1980s and. IDSS Zero gate voltage drain current VDS, = 700 V, VGS = 0 V 100 µA VDS = 700 V, VGS = 0 V TJ = 125 °C 500 IGSS Gatesource leakage current VGS = V/–10 V ±100 nA Notes Pulse test pulse width < 380 µs, duty cycle < 2% The following table shows the dynamic characteristics of the MSC015SMA070S device.

Output charge Qoss VDS = 15 V, VGS = 0 V 29 Gate resistance Rg f = 1 MHz 02 042 08. V GS = 10 V, V DS = 05 • V DSS, I D = 05 • I D25 80 nC Q GD 173 nC R thJC 016 K/W R thCK 005 K/W SourceDrain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min typ max I S V GS = 0 V 80 A I SM Repetitive;. May 21, 13 · V) V T j °C V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 1 10 100 01 1 10 100 1000 I AV t AV µs 8 V V 32 V 0 2 4 6 8 10 12 0 4 8 12 16 V GS V Q gate nC Rev 21 page 7 BSC093N04LS G Package Outline PGTDSON8 PGTDSON8 Outline Footprint.

During the conference, Mr Walter Woltosz, CEO of the Company, provided new revenue guidance The Company expects the fiscal year 07 revenue to be approximately $8,755,000 which is $29 million more than $5,855,000 in the fiscal year 06. V DS (V) V GS =10V V GS =15V V GS =5V V GS =0V V GS =3, 5V SCTL90N65G2V Electrical characteristics (curves) DS135 Rev 1 page 7/14 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance ECOPACK. 3 A pulse width limited by T JM V SD I F = I S, V GS.

NTHL0N65S3F wwwonsemicom 2 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter NTHL0N65S3F Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage − DC ±30 V − AC (f > 1 Hz) ±30 ID Drain Current − Continuous (TC = 25°C) 40 A − Continuous (TC = 100°C) 255 IDM Drain Current − Pulsed (Note 1) 100 A EAS. Output charge Qoss VDS = 40 V, VGS = 0 V 118 Gate resistance Rg f = 1 MHz 04 11 19. V DSS T J = 25 C to 150 C 500 V V DGR T J = 25 C to 150 C, R GS = 1M 500 V V GSS Continuous V V GSM Transient 30 V I D25 T C = 25 C 40 A I DM T C = 25 C, Pulse Width Limited by T JM 1 A I A T C = 25 C 40 A E AS T C = 25 C 35 J dv/dt I S I DM, V DD V DSS, T J 150 C 10 V/ns P D T C.

V GS = 10 V, V DS = 05 V DSS, I D = 24 A 50 nC Q gd 50 nC R thJC 02 °C/W R thCS SOT227B 005 °C/W SourceDrain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions Min Typ Max I S V GS = 0 V 48 A I SM Repetitive 110 A V SD I F = I S, V GS = 0 V, 15 V. BUK9K1360E Dual Nchannel 60 V, 125 mΩ logic level MOSFET 2 September 15 Product data sheet 1 General description Dual logic level Nchannel MOSFET in an. Si7461DP wwwvishaycom Vishay Siliconix SRev J, 13Jul15 4 Document Number For technical questions, contact pmostechsupport@vishaycom THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

Listen & Subscribe to Datpiff's Official Spotify Playlist https//spotifi/2OVygicDownload http//piffme/ Download http//piffme/ Stream a. May 17, 13 · V) V T j °C V GS gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 1 10 100 1 10 100 1000 I AV t AV µs 6 V 15 V 24 V 0 2 4 6 8 10 12 0 8 16 24 32 V GS V Q gate nC Rev 21 page 7 BSC050N03LS G Package Outline PGTDSON85 PGTDSON85 Outline Footprint Dimensions in mm. The Ohm's Law equations work if you use V, A and , or if you use V, mA and k It is vital to use the right units for the three quantities in Ohm's Law, otherwise calculations will give the wrong values You can use either of these two sets of units V = voltage in volts (V).

V = 8 V V GS = 10 V V GS = 12 V V GS = 14 V = 16 V V GS = V Figure 5 Transfer characteristics, based on HiP247 package option GADGTCH 80 60 40 0 0 4 8 12 16 I D (A) V GS (V) V DS = 10 V T J = 175 °C T J = 25 °C Figure 6 Gate charge vs gatesource voltage, based on HiP247 package option GADGQVG. AFGB40T65SQDN wwwonsemicom 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) (continued) Parameter Symbol Test Condition Min Typ Max Unit ELECTRICAL CHARACTERISTIC OF THE DIODE (TJ = 25°C unless otherwise stated) Diode Forward Voltage VFM IF = A − 15 21 V Reverse Recovery Energy Erec IF = A dIF/dt = 0 A/ s, TC = 25°C − 223. V GS = 0 V, V DS = 25 V, f = 1 MHz C iss 1228 1535 pF Output capacitance C oss 387 3 V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz C rss 142 177 Turnon delay time V DD = 30 V, V GS = 10 V, I D = 215 A, R G = 16 W t d(on) 13 195 ns Rise time V DD = 30 V, V.

FDH3632, FDP3632, FD632 wwwonsemicom 2 MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS Drain to Source Voltage 100 V VGS Gate to Source Voltage ± V ID Drain Current − Continuous (TC < 111°C, VGS = 10 V) 80 A − Continuous (Tamb = 25°C, VGS = 10 V, R JA = 43°C/W) 12 ID Drain Current − Pulsed Figure 4 A. Si7469ADP wwwvishaycom Vishay Siliconix S0735Rev A, 28Sep 4 Document Number 661 For technical questions, contact pmostechsupport@vishaycom THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. IXTT12N150HV V DSS = 1500V I D25 = 12A R DS(on) 22 NChannel Enhancement Mode Fast Intrinsic Diode G = Gate D = Drain S = Source Tab = Drain TO268HV G D (Tab) Symbol Test Conditions Maximum Ratings S V DSS T J = 25 C to 150 C 1500 V V DGR T J = 25 C to 150 C, R GS = 1M 1500 V V GSS Continuous 30 V V GSM Transient 40 V I.

385 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 1mA 45 65 V ICES Collector cutoff current (VGE = 0) VCE =10 V VCE =10 V, TJ =125 °C 500 10 µA mA IGES Gateemitter leakage current (VCE = 0) VGE =± V ± 100 nA Symbol Parameter Test conditions Min Typ Max Unit Cies Coes Cres Input capacitance. VCC DC Supply Voltage (Referenced to GND) – 05 to 70 V V in DC Input Voltage (Referenced to GND) – 05 to V CC 05 V V out DC Output Voltage (Referenced to GND) – 05 to V CC 05 V. V V g s 0 10 30 40 Fig 6 Percentage Rdson at 5V increase as a function of avalanche cycles BUK9K1360RAProduct data sheet All information provided in this document is subject to legal disclaimers2 December.

About Press Copyright Contact us Creators Advertise Developers Terms Privacy Policy & Safety How YouTube works Test new features Press Copyright Contact us Creators. NVMFS5C673NL wwwonsemicom 3 TYPICAL CHARACTERISTICS 0 10 15 40 0 10 25 30 40 Figure 1 On−Region Characteristics Figure 2Transfer Characteristics VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3 On−Resistance vs Gate−to−Source Voltage Figure 4. 21 Electrical characteristics (curves) Figure 1 Safe operating area GADGSOA 10 2 10 1 10 0 10 1 10 1 10 0 10 1 10 2 10 3 ID (A) VDS (V) in this area R DS(on) RDS(on) max Single pulse TJ = 175 °C TC = 25 °C tp =1µs tp =10µs tp =100µs tp =1ms tp =10ms V(BR)DSS Figure 2.

SiZF916DT wwwvishaycom Vishay Siliconix S Rev A, 16Oct17 5 Document Number For technical questions, contact pmostechsupport@vishaycom 1 S 1 (1) A = 25 °C DC. V DSX T J = 25 C to 150 C 1000 V V GSX Continuous V V GSM Transient 30 V P D T C = 25 C60W T J 55 150 C T JM 150 C T stg 55 150 C T L Maximum Lead Temperature for Soldering 300 °C T SOLD 16 mm (0062in) from Case for 10s 260 °C M d Mounting Torque (TO2) 113 / 10 Nm/lbin. −Emitter Voltage, V V Collector − Emitter Voltage, V CE V 4 812 16 8 12 14 110 50 30 Cies Coes Cres Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 100 1000 4000 Collector−Emitter Voltage, VCE V Capacitance pF 300 V 400 V Gate Charge, Qg nC Gate − Emitter Voltage, V GE V VCC = 0 V Common Emitter TC = 25°C 0 50 100 1.

CollectorEmitter Voltage, V V GateEmitter Voltage, V GE V 0 4 8 12 16 0 4 8 12 16 40A 25A Common Emitter T C = 125 C I C = 125A CollectorEmitter Voltage, V CE V GateEmitter Voltage, V GE V 0 4 8 12 16 0 4 8 12 16 40A 25A = 25 C I C = 125A CollectorEmitter Voltage, V CE V. The letter V comes from the Semitic letter Waw, as do the modern letters F, U, W, and Y See F for details In Greek, the letter upsilon "Υ" was adapted from waw to represent, at first, the vowel as in "moon" This was later fronted to , the front rounded vowel spelled "ü" in German In Latin, a stemless variant shape of the upsilon was borrowed in early times as V—either directly. 6 OptiMOSTM5 PowerTransistor, 100 V BSC070N10NS5 Final Data Sheet Rev 23, 4 Electrical characteristics diagrams Diagram 1 Power dissipation TC °C P.

IDSS Zero gate voltage drain current VDS = 10 V, VGS = 0 V 100 µA VDS = 10 V, TJ = 125 °C, VGS = 0 V 500 IGSS Gatesource leakage current VGS = V/–10 V ±100 nA Note Pulse test pulse width < 380 µs, duty cycle < 2% The following table shows the dynamic characteristics for the MSC040SMA1S device.